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ray.chen@oksht.com

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18926514320

Home MOSFET SI2319DS-T1-E3
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SI2319DS-T1-E3

FOB Reference Price:
MOQ:
1
Quantity:
56678
Port:
SZ/HK
Payment:
T/T,VISA
Overview

Quick Details
  • Part Number:
  • SI2319DS-T1-E3
  • Package:
  • SOT-23
  • Manufacturer:
  • VISHAY
  • D/C:
  • 1849+
  • Place of Origin:
Packing & Delivery
  • Packing Details:
  • REEL
  • Delivery Time:
  • 24hours
  • Supply Ability:
Payment
Shipping
Product Description


Manufacturer Vishay 
Product Category MOSFET 
Technology Si 
Mounting Style SMD/SMT 
Package / Case SOT-23-3 
Number of Channels 1 Channel 
Transistor Polarity P-Channel 
Vds - Drain-Source Breakdown   Voltage 40 V 
Id - Continuous Drain Current 3.0 A 
Rds On - Drain-Source   Resistance 82 mOhms 
Vgs th - Gate-Source Threshold   Voltage 1 V 
Vgs - Gate-Source Voltage 10 V 
Qg - Gate Charge 17 nC 
Minimum Operating Temperature - 55 C 
Maximum Operating Temperature + 150 C 
Pd - Power Dissipation 1.25 W 
Configuration Single 
Channel Mode Enhancement 
Tradename TrenchFET 
Packaging Cut Tape 
Packaging MouseReel 
Packaging Reel 
Height 1.45 mm  
Length 2.9 mm  
Series SI2  
Transistor Type 1 P-Channel  
Width 1.6 mm  
Brand Vishay / Siliconix  
Forward Transconductance - Min 7 S  
CNHTS8541210000
Fall Time 25 ns  
HTS Code8541290095
MXHTS85412999
Product Type MOSFET  
Rise Time 15 ns  
Factory Pack Quantity3000
Subcategory MOSFETs  
TARIC8541290000
Typical Turn-Off Delay Time 25 ns  
Typical Turn-On Delay Time 7 ns  
Part # Aliases SI2319DS-E3  
Unit Weight 0.000282 oz

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