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Home MOSFET SI1012CR-T1-GE3
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SI1012CR-T1-GE3

FOB Reference Price:
MOQ:
1
Quantity:
72925
Port:
SZ/HK
Payment:
T/T,VISA
Overview

Quick Details
  • Part Number:
  • SI1012CR-T1-GE3
  • Package:
  • SC-75A
  • Manufacturer:
  • VISHAY
  • D/C:
  • 1840+
  • Place of Origin:
Packing & Delivery
  • Packing Details:
  • REEL
  • Delivery Time:
  • 24hours
  • Supply Ability:
Payment
Shipping
Product Description

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Manufacturer Vishay 
Product Category MOSFET 
Technology Si 
Mounting Style SMD/SMT 
Package / Case SC-75-3 
Number of Channels 1 Channel 
Transistor Polarity N-Channel 
Vds - Drain-Source Breakdown   Voltage 20 V 
Id - Continuous Drain Current 600 mA 
Rds On - Drain-Source   Resistance 396 mOhms 
Vgs th - Gate-Source Threshold   Voltage 400 mV 
Vgs - Gate-Source Voltage 4.5 V 
Qg - Gate Charge 1.3 nC 
Minimum Operating Temperature - 55 C 
Maximum Operating Temperature + 150 C 
Pd - Power Dissipation 240 mW 
Configuration Single 
Channel Mode Enhancement 
Tradename TrenchFET 
Packaging Cut Tape 
Packaging MouseReel 
Packaging Reel 
Height 0.8 mm  
Length 1.575 mm  
Series SI1  
Transistor Type 1 N-Channel  
Width 0.76 mm  
Brand Vishay / Siliconix  
Forward Transconductance - Min 7.5 S  
CNHTS8541290000
Fall Time 11 ns  
HTS Code8541210095
MXHTS85412999
Product Type MOSFET  
Rise Time 16 ns  
Factory Pack Quantity3000
Subcategory MOSFETs  
TARIC8541210000
Typical Turn-Off Delay Time 26 ns  
Typical Turn-On Delay Time 11 ns  
Part # Aliases SI1012CR-GE3  
Unit Weight 0.000071 oz

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