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Home MOSFET SI2301CDS-T1-GE3
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SI2301CDS-T1-GE3

FOB Reference Price:
MOQ:
1
Quantity:
581099
Port:
SZ/HK
Payment:
T/T,VISA
Overview

Quick Details
  • Part Number:
  • SI2301CDS-T1-GE3
  • Package:
  • SOT-23
  • Manufacturer:
  • VISHAY
  • D/C:
  • NA
  • Place of Origin:
Packing & Delivery
  • Packing Details:
  • REEL
  • Delivery Time:
  • 24hours
  • Supply Ability:
Payment
Shipping
Product Description

ManufacturerVishay
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current3.1 A
Rds On - Drain-Source Resistance112 mOhms
Vgs th - Gate-Source Threshold Voltage400 mV
Vgs - Gate-Source Voltage4.5 V
Qg - Gate Charge10 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.6 W
ConfigurationSingle
Channel ModeEnhancement
TradenameTrenchFET
PackagingCut Tape
PackagingMouseReel
PackagingReel
SeriesSI2
Transistor Type1 P-Channel
BrandVishay / Siliconix
Forward Transconductance - Min9.5 S
CNHTS8541210000
Fall Time10 ns
HTS Code8541290095
MXHTS85412101
Product TypeMOSFET
Rise Time35 ns
Factory Pack Quantity3000
SubcategoryMOSFETs
TARIC8541210000
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time11 ns
Part # AliasesSI2301CDS-GE3
Unit Weight0.000282 oz


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